Supercurrent Induced by Injection at V=△/e in a Three-terminal Superconcductor-Semiconductor Device

摘要

We report on injection induced enhancement of the supercurrent in a mesoscopic three terminal superconductor semiconductor device. The samples consisted of three superconducting Aluminium electrodes to the same piece of highly doped and degenerate n-GaAs semiconductor. At the base temperature of the experiment (240mK) the DC Josephson current across two of the superconducting electrodes had a maximum for zero injection current from the third electrode. However, when a finite injection current was passed from the third Al electrode at the injection bias V=△(T)/e, a second maximum in critical supercurrent was observed. This second maximum persisted to temperatures where the non-injection supercurrent had vanished.