TUNNEL INJECTION TYPE TRANSIT-TIME EFFECT THREE-TERMINAL SEMICONDUCTOR DEVICE

摘要

PURPOSE:To obtain a three-terminal semiconductor device operated at ultra-high speed by controlling tunnel injection. CONSTITUTION:A thin layer composed of a second conductivity type high impurity density region is formed brought into contact with a source region consisting of a first conductivity type high impurity density region, and used as a tunnel injection junction. 8X10-6cm-1NaW25X107cm-1 are satisfied in the impurity density (Na: unit cm-3) and thickness (W: unit cm) of a second conductivity type, a drain region is shaped from the first conductivity type high impurity density region while being brought into contact with the high impurity density region of the second conductivity type, and a gate region made up of an insulator or a semiconductor having forbidden band width larger than a semiconductor region is formed from a source to a channel region. The angle of transit of carriers injected to a tunnel in a channel is brought to approximately 2pi from pi radial. By this, a ultra-high density ultra-high speed integrated circuit is acquired.