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首页> 外文期刊>Journal of Low Power Electronics >An Optimum Body Biasing for Gain and Linearity Control in CMOS Low-Noise Amplifiers
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An Optimum Body Biasing for Gain and Linearity Control in CMOS Low-Noise Amplifiers

机译:CMOS低噪声放大器的增益和线性度控制的最佳人体偏置

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In this paper, an optimum body biasing for gain and linearity control in CMOS Low Noise Amplifier (LNA) is discussed. A digitally controlled highly linear CMOS LNA has been designed and implemented in a 0.13 μm CMOS process. An off chip Digital to Analog Converter (DAC) is used to generate the proper body bias voltage corresponding to a maximum of the input referred third order intercept point (IIP3). The LNA is suitable for reconfigurable purposes due to its smooth control of gain and linearity. It is dedicated to wireless sensor network applications in the 2.4 GHz ISM Band. The circuit achieves 12.4 dB nominal gain, 4.2 dB noise figure (NF), and -1 dBm IIP3 while drawing 3.1 mA at a 1 V supply. When adjusting the body bias to -0.55 V, the IIP3 peaks at 6 dBm for a 1.7 mA current consumption. The gain and NF are 8.9 dB and 6.2 dB respectively.
机译:本文讨论了用于CMOS低噪声放大器(LNA)的增益和线性控制的最佳本体偏置。已经设计并以0.13μmCMOS工艺实现了数字控制的高度线性CMOS LNA。片外数模转换器(DAC)用于生成与输入参考的三阶交调点(IIP3)的最大值相对应的适当的本体偏置电压。 LNA平滑地控制增益和线性度,因此适合于可重构目的。它专用于2.4 GHz ISM频段中的无线传感器网络应用。该电路实现了12.4 dB的标称增益,4.2 dB的噪声系数(NF)和-1 dBm的IIP3,同时在1 V电源下消耗了3.1 mA电流。将本体偏置调整为-0.55 V时,IIP3在6 dBm达到峰值,消耗1.7 mA电流。增益和NF分别为8.9 dB和6.2 dB。

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