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首页> 外文期刊>Journal of Materials Science >Microstructure and electrical properties of ZnO-based varistors prepared by high-energy ball milling
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Microstructure and electrical properties of ZnO-based varistors prepared by high-energy ball milling

机译:高能球磨制备ZnO基压敏电阻的微观结构和电性能

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摘要

ZnO-based varistor ceramics were prepared at sintering temperatures ranging from 900 degrees C to 1,300 degrees C, by subjecting the mixed oxide powders to high-energy ball milling (HEBM) for 0, 5, 10 and 20 h, respectively. Varistor ceramics prepared by HEBM featured denser body, better electrical properties sintered at low-temperature than at traditional high-temperature. The high density is due to the refinement of the crystalline grains, the enhanced stored energy in the powders coming from lattice distortion and defects as well as the promotion of liquid-phase sintering. Good electrical properties is attributed to proper microstructure formed at low-temperature and improved grain boundary characteristics resulting from HEBM. With increasing sintering temperatures, the electrical properties and density became worse due to the decrease in amount of Bi-rich phase. Temperature increased up to 1,200 degrees C or above, the Bi-rich phase vanished and the ceramics exhibited very low nonlinear coefficient.
机译:通过将混合氧化物粉末分别进行0、5、10和20 h的高能球磨(HEBM),在900摄氏度至1,300摄氏度的烧结温度下制备ZnO基压敏陶瓷。 HEBM制备的压敏陶瓷具有致密的主体,与传统的高温相比,在低温下烧结的电性能更好。高密度归因于晶粒的细化,粉末中晶格畸变和缺陷产生的增强的储能以及液相烧结的促进。良好的电性能归因于在低温下形成的适当微结构,以及由HEBM产生的改善的晶界特性。随着烧结温度的升高,由于富Bi相的数量减少,电性能和密度变差。温度升高到1200摄氏度或更高,富Bi相消失,陶瓷呈现出非常低的非线性系数。

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