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Reproducibility and stability of N-Al codoped p-type ZnO thin films

机译:N-Al共掺杂p型ZnO薄膜的重现性和稳定性

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Reproducible and stable p-type ZnO thin films have been prepared by the N-Al codoping method. Secondary ion mass spectroscopy measurements demonstrate that N and Al are incorporated into ZnO. The resistivity, carrier concentration, and Hall mobility are typically of 50-100 Omega cm, 1 x 10(17)-8 x 10(17) cm(-3), and 0.1-0.6 cm(2)/Vs, respectively, for the N-Al codoped p-type ZnO films. Hall measurement, X-ray diffraction, and optical transmission were carried out to investigate the changes of the properties with the storage period. Results show that the p-type characteristics of the N-Al codoped ZnO films are of acceptable reproducibility and stability. In addition, the N-Al codoped p-type ZnO films have good crystallinity and optical quality. The properties are time independent. (c) 2006 Springer Science + Business Media, Inc.
机译:通过N-Al共掺杂方法已经制备了可再现且稳定的p型ZnO薄膜。二次离子质谱测量表明,N和Al被掺入了ZnO中。电阻率,载流子浓度和霍尔迁移率通常分别为50-100Ωcm,1 x 10(17)-8 x 10(17)cm(-3)和0.1-0.6 cm(2)/ Vs,用于N-Al共掺杂的p型ZnO薄膜。进行霍尔测量,X射线衍射和光透射以研究性质随储存时间的变化。结果表明,N-Al共掺杂的ZnO薄膜的p型特性具有可接受的再现性和稳定性。另外,N-Al共掺杂的p型ZnO膜具有良好的结晶度和光学质量。这些属性与时间无关。 (c)2006年Springer Science + Business Media,Inc.

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