Friction and thermal phenomena in chemical mechanical polishing

摘要

The friction and thermal phenomenon was investigated to verify the effect of temperature on the material removal mechanism in chemical mechanical polishing (CMP). To this end, the polishing of various materials, temperature measurement by way of infrared ray camera, frictional force measurement and real contact area measurement experiment were conducted. From the results of these experiments, we concluded that the material removal mechanism in CMP under the influence of increasing temperature, is dominated by the increase in chemical reactions rather than mechanical ones. Furthermore, the removal rate did not remain constant during the polishing process and this has an effect on the within wafer non-uniformity (WIWNU).