Fabrication of a TEM sample of ion-irradiated material using focused ion beam microprocessing and low-energy Ar ion milling.

摘要

Cross-section-view TEM samples of ion-irradiated material are successfully fabricated using a focused ion beam (FIB) system and low-energy Ar ion milling. Ga ion-induced damages in FIB processing are reduced remarkably by the means of low-energy Ar ion milling. There are optimized ion milling conditions for the reduction and removal of the secondary artifacts such as defects and ripples. Incident angles and accelerated voltages are especially more important factors on the preservation of a clean surface far from secondary defects and surface roughing due to Ga and Ar ion bombardment.