Estimation of detrimental impact of new metal candidates in advanced microelectronics

摘要

The increasing complexity and miniaturization of integrated circuits (IC) requires the introduction of a large number of new materials which represent possible risks of contamination. Indeed many integration steps use "exotic metals" to achieve the targeted device performances: - The transistors include high-k dielectrics to replace SiC>2, silicides to replace the polycrystalline Si gate, metals for electrodes, substrates with high mobility.