Effects of Pulsed Electron Beam Annealing on Radiation Damage in N-Doped a-SiC: H Films Deposited by PECVD

摘要

We present properties of nitrogen-doped amorphous silicon carbide films that were grown by a plasma enhanced chemical vapour deposition (PE CVD) technique and annealed by pulsed electron beam. Samples with different amounts of N were achieved by a small addition of ammonia NH_3 into the gas mixture of silane SiH_4 and methane CH_4, which were directly introduced into the reaction chamber. The actual amount of nitrogen in the SiC films was determined by Rutherford backscattering spectrometry (RBS). A simulation of the RBS spectra was used to calculate the concentration ofj carbon, silicon and nitrogen. The current-voltage (I-V) characteristics of diodes made of doped and irradiated SiC films grown on silicon substrates were studied.