Design and Growth of Visible-Blind and Solar-Blind III-N APDs on Sapphire Substrates

摘要

GaN-based visible-blind and AlGaN-based solar-blind avalanche photodiodes (APDs) have been grown and fabricated on sapphire substrates. The GaN p-i-n APDs show low dark current with high gain. The AlGaN layers for the Al_(0.55)Ga_(0.45)N-based APDs are grown using a newly developed pulsed metal-organic chemical vapor deposition (MOCVD) process, and the material characterization results show excellent material quality. The spectral responsivity of the devices show a bandpass characteristic with cutoffs in the ultraviolet (UV) visible-blind and solar-blind spectrum for GaN- and Al_(0.55)Ga_(0.45)N-based APDs, respectively.