Growth and Characterization of n-Type GaAs/AIGaAs Quantum Well Infrared Photodetector on GaAs-on-Si Substrate

摘要

We present in this article device characteristics of molecular beam epitaxy grown GaAs/A1GaAs quantum well infrared photodetectors (QWIP) on a semi-insulating GaAs substrate and on a GaAs-on-Sisubstrate grown by metalorganic chemical vapor deposition (MOCVD). Important issues for QWIP application such as dark current, spectral response, and absolute responsivity were measured. We find that the detector structure grown on a GaAs-on-Si substrate, exhibits comparable dark current and absolute responsivity and a small blue shift in the spectral response. This is the first demonstration of long wavelength GaAs/A1GaAs quantum well infrared photodetector using MOCVD grown GaAs-on-Si substrate and the performance is comparable to a similar detector structure grown on a GaAs substrate.