首页> 外文期刊>Journal of Electronic Materials >Intel-metallic Compound Formation and Morphology Evolution in the 95Pb5Sn Flip-Chip Solder Joint with Ti/Cu/Ni Under Bump Metallization during Reflow Soldering
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Intel-metallic Compound Formation and Morphology Evolution in the 95Pb5Sn Flip-Chip Solder Joint with Ti/Cu/Ni Under Bump Metallization during Reflow Soldering

机译:回流焊接过程中凸点金属化下含Ti / Cu / Ni的95Pb5Sn倒装芯片焊点中的英特尔金属化合物形成和形貌演变

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摘要

Intermetallic compound formation and morphology evolution in the 95Pb5Sn flip-chip solder joint with the Ti/Cu/Ni under bump metallization(UBM)during 350 deg C reflow for durations ranging from 50 sec to 1440 min were investigated.A thin intermetallic layer of only 0.4 mum thickness was formed at the 95Pb5Sn/UBM interface after reflow for 5 min.When the reflow was extended to 20 min,the intermetallic layer grew thicker and the phase identification revealed the intermetallic layer comprised two phases,(Ni,Cu)_3Sn_2 and(Ni,Cu)_3Sn_4.The detection of the Cu content in the intermetallic compounds indicated that the Cu atoms had diffused through the Ni layer and took part in the intermetallic compound formation.With increasing reflow time,the(Ni,Cu)_3Sn_4 phase grew at a faster rate than that of the(Ni,Cu)_3Sn_2 phase.Meanwhile,irregular growth of the(Ni,Cu)_3Sn_4 phase was observed and voids formed at the(Ni,Cu)_3Sn_2/Ni interface.After reflow for 60 min,the(Ni,Cu)_3Sn_2 phase disappeared and the(Ni,Cu)_3Sn_4 phase spalled off the Ni layer in the form of a continuous layer.The gap between the(Ni,Cu)_3Sn_4 layer and the Ni layer was filled with lead.A possible mechanism for the growth,disappearance,and spalling of the intermetallic compounds at the 95Pb5Sn/UBM interface was proposed.
机译:研究了在350°C回流下持续时间为50 s至1440 min的凸点金属化(UBM)下的Ti / Cu / Ni的95Pb5Sn倒装芯片焊点与Ti / Cu / Ni的金属间化合物的形成和形貌演变。回流5min后,在95Pb5Sn / UBM界面上形成0.4μm的厚度。当回流时间延长至20min时,金属间层变厚,相识别表明金属间层包括(Ni,Cu)_3Sn_2和(Ni,Cu)两相。 (Ni,Cu)_3Sn_4。检测金属间化合物中的Cu含量表明Cu原子已扩散通过Ni层并参与了金属间化合物的形成。随着回流时间的增加,(Ni,Cu)_3Sn_4相(Ni,Cu)_3Sn_2相的不规则生长,同时观察到(Ni,Cu)_3Sn_4相的不规则生长,并在(Ni,Cu)_3Sn_2 / Ni界面处形成空隙。 60分钟,(Ni,Cu)_3Sn_2相消失(Ni,Cu)_3Sn_4相以连续层的形式剥落Ni层。(Ni,Cu)_3Sn_4层与Ni层之间的间隙被铅填充。可能的生长,消失机理并提出了在95Pb5Sn / UBM界面上金属间化合物的剥落。

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