Processing and Thermoelectric Performance Characterization of Thin-Film Devices Consisting of Electrodeposited Bismuth Telluride and Antimony Telluride Thin-Film Legs

摘要

Thermopile thin-film devices were fabricated by successive electrodeposition of p-type Sb-Te and n-type Bi-Te films. The thermopile processed with 1-(mu)m-thick SiO_(2) as an insulating layer on the thin-film legs exhibited sensitivity of 57.5 mV/K, much larger than the 7.3 mV/K measured for a thermopile with an insulating layer of 6-(mu)m-thick photoresist. Sensitivity of 30.4 mV/K was obtained for a thermopile with a 1-(mu)m-thick SiN_(x) insulating layer.