provided by the illustrative embodiment of the thermal transfer material according to various aspects is , the present embodiment provides improved performance has an index . In one exemplary embodiment, the thermoelectric material is doped or not , or contain antimony , tin and / or a bismuth telluride nanoparticles can be doped with at least one of a combination of in general . Bismuth telluride nanoparticles can be dispersed in a matrix material comprising a particulate bismuth telluride . A method for manufacturing the undoped and doped bismuth telluride nanoparticles also are disclosed , 1 to 200 nm range of the bismuth telluride nanoparticles having a size may include a solvothermal method for preparing . ;
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