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首页> 外文期刊>Journal of Electronic Materials >Weakening of the Cu/Cu_(3)Sn(100) Interface by Bi Impurities
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Weakening of the Cu/Cu_(3)Sn(100) Interface by Bi Impurities

机译:Bi杂质减弱Cu / Cu_(3)Sn(100)界面

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摘要

We have performed density functional theory calculations to examine the role of Bi impurities in modifying the structure and properties of the Cu/Cu_(3)Sn(100) interface. Analysis of the heat of supercell formation reveals that Bi atoms preferentially replace Cu atom in the Cu slab. Substitution of Cu by Bi reduces the adhesion energy of the interface from 1.5 J/m~(2) to 1.1 J/m~(2), primarily due to the atomic size effect. The size effect leads to expansion of the interface, because surrounding Cu and Sn atoms are pushed away from the misfit Bi atoms. Analysis of electronic density indicates that the local charge density is dispersed around Bi atoms. The presence of a Bi atom makes surrounding atoms less active, which is attributed to the reduction of hybridizations.
机译:我们已经执行了密度泛函理论计算,以检查Bi杂质在修改Cu / Cu_(3)Sn(100)界面的结构和性质中的作用。对超级电池形成热的分析表明,Bi原子优先取代了Cu平板中的Cu原子。 Bi取代Cu可使界面的粘附能从1.5 J / m〜(2)降低到1.1 J / m〜(2),这主要是由于原子尺寸效应所致。尺寸效应导致界面扩展,因为周围的Cu和Sn原子被推离失配的Bi原子。电子密度的分析表明局部电荷密度分散在Bi原子周围。 Bi原子的存在使周围原子的活性降低,这归因于杂交的减少。

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