The Effect of O_2 Ambient Annealing on the Microstructure of Cu(Mg) in the Form of a Cu(Mg)/SiO_2/S Multilayer

摘要

The effect of annealing in an O_2 ambient on Cu(Mg)/SiO_2/Si multilayer films was investigated. As-deposited Cu(Mg)/SiO_2/Si multilayer samples with film thickness in the 1,000-3,000 A range were annealed for 30 min in oxygen ambients at pressure ranging from vaccum to 100 mtorr. The results showed that annealing in an 8-mtorr O_2 ambient significiantly decreased the electrical resistivity of 1,000 A sample from 10.5 muomega-cm to 3.7 muomega-cm. Annealing in the O_2 ambient enhanced Mg diffusion to the surface in comparison to vacuum annealing. Furthermore, O_2 ambient annealing leads to excessive grain growth. However, the effect of O_2 ambient annealing on resistivity is less when the thickness of the film increases.