Microstructure of ZnO/Cu/TaN/SiO_2/Si multilayers prepared by sputter deposition

摘要

ZnO films have been investigated extensively due to their interesting electrical, optical, and piezoelectric properties for many applications. The applications for ZnO include surface acoustic wave devices [1, 2], acousto-optic and acousto-electronic devices [3], bulk acoustic wave transducers [4], and optical waveguides [5]. To prepare ZnO thin films, several techniques including rf sputter deposition [6, 7], dc sputter deposition [8, 9], ion-plating [10], chemical vapor deposition [11, 12], spray pyrolysis [13, 14], sol-gel method [15], and pulsed laser deposition [16] have been used. Among them, the sputter deposition techniques provide the advantages of simplicity, high deposition rate, low substrate temperature, good surface flatness, transparency and dense layer formation.