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首页> 外文期刊>Journal of Electronic Materials >Electromigration Effects on Intermetallic Growth at Wire-Bond Interfaces
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Electromigration Effects on Intermetallic Growth at Wire-Bond Interfaces

机译:电迁移对金属-键合界面金属间生长的影响

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At a bimetallic interface,excessive intermetallic growth can cause device failure.For each intermetallic phase,a direct current flowing normal to the interface can change its thickening rate,increasing the rate for current in one direction and decreasing it for the reverse direction.In this paper,we present electrical resistance measurements on single wire-bond/bond-pad interfaces under the influence of current.Resistance increases are correlated with the growth of intermetallics observed in cross sections of the wire bonds,providing a sensitive probe of micro structural evolution.The form of resistance change is clearly altered under applied current and depends on polarity.The resistance changes demonstrate key aspects of the effects of electromigration on intermetallic growth,but a fully quantitative interpretation of the changes is hampered by the appearance of more than one intermetallic phase and by the development of voids.
机译:在双金属界面处,金属间的过度生长会导致器件故障。对于每个金属间相,垂直于该界面流动的直流电会改变其增厚速率,从而增加一个方向上的电流速率而减小相反方向上的电流速率。在本文中,我们提出了在电流影响下在单线键合/键合焊盘界面上的电阻测量。电阻的增加与在线键合截面中观察到的金属间化合物的生长相关,提供了微结构演变的灵敏探针。电阻变化的形式在施加电流的情况下会明显改变,并取决于极性。电阻变化说明了电迁移对金属间化合物生长的影响的关键方面,但是出现多个金属间化合物相妨碍了对该变化的完全定量解释。并通过空洞的发展。

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