Electromigration effects on compound growth at interfaces

摘要

Interfacial reactions are important in microelectronic devices and can be accelerated or decelerated by imposing a direct electric current normal to the interface. These effects are analyzed by including electromigration-driven interchange of atomic species in a conventional analysis of reaction layer thickening in a binary system controlled by interdiffusion in the layer and by an interfacial reaction barrier. New types of behavior are predicted. When the electromigration augments interdiffusion, layer growth can accelerate as the layer thickens, in contrast to the usual deceleration. When the electromigration opposes interdiffusion, there is a limiting layer thickness, inversely proportional to the applied current.