Effects of Hydrogen on Majority Carrier Transport and Minority Carrier Lifetimes in Long-Wavelength Infrared HgCdTe on Si

摘要

We present extended results on the use of a hydrogen plasma to passivate the effects of defects in long-wave ir HgCdTe/Si.Annealed and as-grown epilayers,in situ doped with indium,were exposed to a hydrogen plasma generated in an electron cyclotron resonance(ECR)reactor.Secondary ion mass spectrometry was used to measure the extent of hydrogen incorporation into the epilayers.Hall and photoconductive lifetime measurements were used to assess the efficacy of passivation.The passivation of defects responsible for the scattering and recombination of electrical carriers was observed for most ECR conditions over a range of dislocation densities.