On the inetics of the activation of arsenic as a p-type dopant in Hg_(1-x)Cd_xTe

摘要

The kinetics of the activation of arsenic in Hg_(1-x)Cd_xTe into an an acceptor state is discussed basedon a new model.In this model,it is assumed that the rate-limiting step is the out-diffusion of the excess tellurium that is produced as an arsenic atom jumps from a metal sublattice site to a tellurium sublattic esite.In this paper,the model is extended to incorporate additional data from the literature.It is shown that arsenic activation can be accomplished by mercury-rich anneals in reasonable times,over a wide range of temperatures,extending as low as 250degC.