Modification of properties of p-type dopants with other p-type dopants

摘要

One p-type dopant is implanted into a substrate to modify the diffusion characteristics of another p-type dopant implanted into the substrate. As an example, gallium is diffused into a p-type region along with boron to confine the diffusion of the boron, and thereby produce smaller device regions in silicon. Along with the confined volume, the resulting regions exhibit electrical activity that is greater than the simple additive behavior of boron and gallium acting alone.