首页> 外文期刊>Journal of Electronic Materials >Grain Grwoth simulation of [001] Textured YBCO Film Grown on (001) Substrates with Large Lattice Misfit: Prediction of Misorientations of the Remaining Boundaries
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Grain Grwoth simulation of [001] Textured YBCO Film Grown on (001) Substrates with Large Lattice Misfit: Prediction of Misorientations of the Remaining Boundaries

机译:(001)具有大晶格不匹配的(001)衬底上生长的[001]带纹理的YBCO薄膜的晶粒长大模拟:剩余边界取向错误的预测

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摘要

We study the effects of (1) the variation of grain boundary energy with misorientation and (2) the large lattice misfit (>3%) between the films and substrates on grain growth in films by method ofMonte Carlo simulations. The results from the grain growth simulation in YBa2Cu3O7-x (YBCO) films was found to concur with previous experimental observation of preferred grain orientations for YBCO films deposited on various substrates such as (001) magnesium oxide (MgO) and (001) yttria stabilized zirconia (YSZ). The simula- tion has helped us to identify three factors influencing the competition of these [001] tilt boundaries. They are: (1) the relative depths of local minima in the boundary energy vs. misorientation curve, (2) the number of combinations of coincidence epitaxy (CE) orientations contributing to the exact misorientation for each of the high-angle-but-low-energy (HABLE) boundaries, and (3) the number of combinations of CE orientations within the angular ranges bracket- ing each of the exact HABLE boundaries. Hence, these factors can be applied to clarify the origin of special misorientations observed experimentally.
机译:我们通过蒙特卡罗模拟研究了(1)取向差引起的晶界能变化和(2)膜与基底之间的大晶格失配(> 3%)对膜中晶粒生长的影响。发现YBa2Cu3O7-x(YBCO)膜中晶粒生长模拟的结果与先前实验观察到的沉积在各种基材(例如(001)氧化镁(MgO)和(001)氧化钇稳定的)上的YBCO膜的优选晶粒取向一致。氧化锆(YSZ)。仿真已经帮助我们确定了影响这些[001]倾斜边界竞争的三个因素。它们是:(1)边界能与取向错误曲线中局部极小值的相对深度;(2)导致每个高角度但精确的取向错误的重合外延(CE)取向组合的数量。低能量(HABLE)边界,以及(3)包围每个确切HABLE边界的角度范围内CE定向的组合数。因此,这些因素可用于澄清实验观察到的特殊取向错误的起源。

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