首页> 外文期刊>Journal of Electronic Materials >Influences of Te-Rich and Cd-Rich Precipitates of CdZnTe Substrates on the Surface Defects of HgCdTe Liquid-Phase Epitaxy Materials
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Influences of Te-Rich and Cd-Rich Precipitates of CdZnTe Substrates on the Surface Defects of HgCdTe Liquid-Phase Epitaxy Materials

机译:CdZnTe衬底的富Te和富Cd沉淀对HgCdTe液相外延材料表面缺陷的影响

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摘要

Influences of Te-rich and Cd-rich precipitates of CdZnTe substrates on the surface defects of HgCdTe epilayers grown by Te-rich liquid-phase epitaxy were investigated. The results show that HgCdTe surface defects are mainly attributable to precipitates on CdZnTe substrate surfaces. At the same time, the remelting of substrate surface layers during the liquid-phase epitaxial process also affects the number and morphology of HgCdTe surface defects. According to the morphological characteristics of surface defects, three types of surface defects were observed on the surfaces of HgCdTe epilayers. There are no obvious differences in the morphologies of the surface defects grown on Te-rich and Cd-rich substrates. However, the dislocation distributions around surface defects are different for HgCdTe epilayers grown on different substrates.
机译:研究了富Te和富Cd的CdZnTe衬底沉淀物对富Te液相外延生长HgCdTe外延层表面缺陷的影响。结果表明,HgCdTe表面缺陷主要归因于CdZnTe衬底表面的沉淀。同时,液相外延过程中衬底表面层的重熔也影响HgCdTe表面缺陷的数量和形态。根据表面缺陷的形态特征,在HgCdTe外延层表面观察到三种类型的表面缺陷。在富Te和富Cd的衬底上生长的表面缺陷的形态没有明显差异。然而,对于生长在不同衬底上的HgCdTe外延层,表面缺陷周围的位错分布是不同的。

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