AlGalnAs/InP Strained-Layer Quantum Well Lasers at 1.3 #mu#m Grown by Solid Source Molecualr Beam Epitaxy

摘要

Al_xGa_yIn_(1-x-y)As/InP strained-layer multiple-quantum-well lasers emitting at 1.3 #mu#m have been grown by solid source molecualr beam epitaxy, and the performance characteristics have been studied. The lasers contain 4,5, or 6 compressively strained quantum wells in the active region. They exhibit low transparency current densities, high gain coefficients, and high characteristic tempertures compared to conventional GaInAsP/InP quantum well lasers. The results show that desired lasing features can be achieved with relatively simple layer structures if the doping profles and waveguide structures are propertively simple layer structures if the doping profiles and waveguide structures are properly designed and the material is grown to high structural perfection.