Zinc Oxide Thin-Film Transistors Fabricated at Low Temperature by Chemical Spray Pyrolysis

摘要

We report the electrical behavior of undoped zinc oxide thin-film transistors (TFTs) fabricated by low-temperature chemical spray pyrolysis. An aerosol system utilizing aerodynamic focusing was used to deposit the ZnO. Polycrystalline films were subsequently formed by annealing at the relatively low temperature of 140A degrees C. The saturation mobility of the TFTs was 2 cm(2)/Vs, which is the highest reported for undoped ZnO TFTs manufactured below 150A degrees C. The devices also had an on/off ratio of 10(4) and a threshold voltage of -3.5 V. These values were found to depend reversibly on measurement conditions.