Thick In_xGa_(1-x)N Films Prepared by Reactive Sputtering with Single Cermet Targets

摘要

In_xGa_(1-x)N films with x = 0, 0.25, and 0.5 were grown on SiO_2/Si(100) substrates by reactive sputtering at 200℃ for 90 min with single cermet targets made by hot pressing a powder mixture of metallic indium and gallium and gallium nitride. After alloying with In, InGaN showed preferential (1010) diffraction, smooth surface with roughness less than 1.80 nm, reduced mismatch with the Si substrate, enhanced electron mobility above 7 cm~2 V~(-1) s~(-1), and blue and green light-emitting capabilities.