Wide Dynamic Range CMOS Amplifier Design for RF Signal Power Detection via Electro-Thermal Coupling

摘要

A differential temperature sensor for on-chip signal and DC power monitoring is presented for built-in testing and calibration applications. The amplifiers in the sensor are designed with class AB output stages to extend the dynamic range of the temperature/power measurements. Two high-gain amplification stages are used to achieve high sensitivity to temperature differences at points close to devices under test. Designed in 0.18 μm CMOS technology, the sensor has a simulated sensitivity that is tunable up to 210 mV/℃ with a corresponding dynamic range of 13℃. The sensor consumes 2.23 mW from a 1.8 V supply. A low-power version of the sensor was designed that consumes 1.125 mW from a 1.8 V supply, which has a peak sensitivity of 185.7 mV/℃ over a 8℃ dynamic range.