Design considerations of high-dynamic-range wide-band amplifiers in BiCMOS technology

摘要

Design techniques of high-dynamic-range wideband amplifiers in BiCMOS technology for matching either a telescope (capacitive) or a wire (resistive) antenna are presented. The advantage of the BiCMOS process over bipolar and CMOS ones in designing such high-performance amplifiers is theoretically studied. It is analytically shown that by optimal combination of bipolar and MOS devices, BiCMOS amplifiers can be designed that show superior performance over bipolar and CMOS realizations. The design principles were verified by measurements on a bipolar test amplifier implemented in a linear gate array of a BiCMOS technology. A total equivalent input noise level as low as 0.25 mu V/sub RMS/ within a 2.5-kHz IF band is achieved and a dynamic range of 135 dB was measured without the use of any automatic gain control.