Compact Negative Bias Temperature Instability Model for Silicon Nanowire MOSFET (SNWT) and Application in Circuit Performance Simulation

摘要

This paper reports the modeling of Negative Bias Temperature Instability (NBTI) of P-type Si-nanowire MOS field effect transistor (SNWT) and its applications in circuit simulation. The model is based on the reaction-diffusion (R-D) theory together with the reaction probability of bond breaking and reconstruction of the Si–H bond. As a result, the proposed model agrees better with experimental data compared with conventional approach using R-D model alone. The model has been implemented into the SPICE circuit simulator with model parameters calibrated from experimental data. The effects of NBTI on the delays of logic gate and oscillators are evaluated using the model to demonstrate the functionality of the model.