A Compact Model of Silicon-Based Nanowire MOSFETs for Circuit Simulation and Design

摘要

A silicon-based nanowire FET (SNWT) compact model is developed for circuit simulation. Starting from the solution of poisson's equation, an accurate inversion charge expression is derived for SNWTs with arbitrary body doping concentration. The drain current, transconductance, output conductance, terminal charges, and capacitances are then calculated based on fundamental device physics. Short-channel and quantum effects have been included in the model in a self-consistent way. Comparison between the numerical simulation and analytical calculation shows that the proposed model is valid for all operation regions of SNWTs with different dimensions and channel doping. The model has been implemented in circuit simulators by Verilog-A, and its application in circuit simulation is also demonstrated.