首页> 外文期刊>Journal of Adhesion Science and Technology: The International Journal of Theoredtical and Basic Aspects of Adhesion Science and Its Applications in All Areas of Technology >Effects of substrate bias voltage on adhesion of DC magnetron-sputtered copper films on E24 carbon steel: investigations by Auger electron spectroscopy
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Effects of substrate bias voltage on adhesion of DC magnetron-sputtered copper films on E24 carbon steel: investigations by Auger electron spectroscopy

机译:衬底偏置电压对E24碳钢上直流磁控溅射铜膜附着力的影响:俄歇电子能谱研究

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摘要

The adhesion strength of copper thin films on E24 carbon steel substrates was studied using the scratch test via the critical load. Coatings were deposited by a DC magnetron sputtering system. All substrates were mechanically polished; some of them were directly coated and others were ion-etched by argon ions prior to deposition process. The effects of substrate negative bias voltage during the film growth were investigated. Experimental results showed that the critical load depended on the bias voltage and that the higher bias voltage, the better adhesion. It was also observed that the deposition rate of deposited films gradually decreased with the increase of the substrate bias voltage. Furthermore, the working pressure during the substrate ion bombardment etching greatly affected the critical load. Scanning electron microscopy was used to observe the scratch tracks to accurately evaluate the critical load. Substrate surface profiles obtained by a mechanical profilometer showed that the critical load increased with the increase of the surface roughness. The analysis by Auger electron spectroscopy revealed that the interface, in case of an unbiased substrate, was relatively narrow and abrupt. However, in case of a bias voltage application, the interface was wider and more diffuse. These results suggest that the mechanisms involved in critical load enhancement are due firstly to the substrate surface roughness and the substrate temperature generated by the ion bombardment, secondly to the physical mixing in the interfacial domain and the densification of the deposited material created by the bias voltage.
机译:通过划痕试验,通过临界载荷研究了铜薄膜在E24碳钢基底上的附着强度。通过DC磁控溅射系统沉积涂层。所有基材均进行机械抛光;其中一些直接镀膜,另一些在沉积工艺之前被氩离子离子蚀刻。研究了薄膜生长过程中衬底负偏压的影响。实验结果表明,临界负载取决于偏置电压,偏置电压越高,附着力越好。还观察到,沉积膜的沉积速率随着衬底偏置电压的增加而逐渐降低。此外,在基板离子轰击蚀刻期间的工作压力极大地影响了临界载荷。使用扫描电子显微镜观察划痕,以准确评估临界载荷。通过机械轮廓仪获得的基材表面轮廓表明,临界载荷随表面粗糙度的增加而增加。俄歇电子能谱分析表明,在无偏向基板的情况下,界面相对较窄且陡峭。但是,在施加偏置电压的情况下,界面更宽且更分散。这些结果表明,关键载荷增强所涉及的机制首先是由于基板表面粗糙度和离子轰击产生的基板温度,其次是由于界面域中的物理混合以及由偏置电压产生的沉积材料的致密化。

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