A novel synthesis of Zn_2SiO_4 thin film on n-type ZnO semiconductor electrode and its electrochemical luminescence under the anodic polarization

摘要

A novel synthesis of Zn_2SiO_4:Mn thin film was earned out. The Zn_2SiO_4 thin film on ZnO disk obtained by sintering ZnO disk deposited with SiO by the use of vapor deposition method. Furthermore Zn_2SiO_4 thin film doped with Mn~(2+) or Eu~(3+) ion was obtained by sintering the Zn_2SiO_4/ZnO disk applied with the Mn~(2+) or Eu~(3+) nitrate solutions. The Zn_2SiO_4:Mn and Zn_2SiO_4:Eu thin film modified on ZnO semiconductor electrode indicated electrochemical luminescence (ECL) based on the dopants under anodic polarization at about +12.6 V. The ECL would be attributed to selective excitation of emission centers by avalanche breakdown.