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High perpendicular coercive field of CoFe_2O_4 thin films deposited by PLD

机译:PLD沉积CoFe_2O_4薄膜的高垂直矫顽场

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摘要

Thin films of CoFe_2O_4 were deposited on (100) Si and (100) MgO substrates by pulsed laser deposition (PLD). The X-ray analysis shows the existence of single-phase spinel structure. Thin films deposited on (100) MgO substrates are epitaxial and completely oriented in-plane and out of plane due to the small lattice mismatch between Co ferrite and MgO. The surface microstructure was probed by atomic force microscopy and we can describe it like a tidy mosaic of monocrystals. Surprisingly, the films grew on (100) Si using 355 nm, reveal a complete (111) orientation in spite of the native oxide of the substrate when deposited. The films deposited with 266 nm also were textured in the (111) but with less particulate on the surface. (100) films show at 35K a perpendicular coercive field H_c as high as 12.9 kOe, meanwhile for the (111) films H_c was around 9 kOe. However, at room temperature, the (111) films deposited with 266 nm show a perpendicular coercive field of 5.1 kOe and a squareness of 0.86 which make them attractive for magneto-optic recording applications.
机译:通过脉冲激光沉积(PLD)在(100)Si和(100)MgO衬底上沉积CoFe_2O_4薄膜。 X射线分析表明存在单相尖晶石结构。由于钴铁氧体和MgO之间的晶格失配较小,因此在(100)MgO衬底上沉积的薄膜是外延的,并且在面内和面外完全取向。通过原子力显微镜对表面微观结构进行了探测,我们可以将其描述为整洁的单晶马赛克。出乎意料的是,尽管沉积时衬底的天然氧化物,但膜仍在355 nm的条件下在(100)Si上生长,显示出完全的(111)取向。沉积有266 nm的薄膜也在(111)中形成纹理,但表面上的颗粒较少。 (100)膜在35K处显示垂直矫顽场H_c高达12.9 kOe,而(111)膜H_c约为9 kOe。然而,在室温下,以266 nm沉积的(111)膜显示出5.1 kOe的垂直矫顽场和0.86的矩形度,这使其对磁光记录应用具有吸引力。

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