Dwell time effects on high coercivity CoFe_2O_4 thin films deposited by the solution processing

摘要

High room temperature coercivity CoFe_2O_4 (CFO) thin films are desirable in view of many applications, which is seldom achieved over 3 kOe in solution deposited CFO thin films. Herein, grain growth kinetic is investigated in the solution derived CFO thin films with coercivity larger than 4 kOe, showing a relaxation mechanism. The coercivity and magnetization increase initially and then decrease with increasing dwell time. The high coercivity is originated mainly from the critical grain size and the growth strain induced by the small crystallites and poorly developed grains. The results will provide a route to fabricate larger-area CFO thin films with high coercivity on silicon wafers by low-cost solution processing.