SOLUTION PHASE PREPARATION METHOD OF A GROUP II-VI COMPOUND SEMICONDUCTOR THIN FILM AND A GROUP II-VI COMPOUND SEMICONDUCTOR THIN FILM PREPARED THEREBY, CAPABLE OF REDUCING COSTS AND TIME REQUIRED FOR A PROCESS

摘要

PURPOSE: A solution phase preparation method of a group ii-vi compound semiconductor thin film and a group ii-vi compound semiconductor thin film prepared thereby are provided to form a semiconductor film in a substrate without a high process vacuum deposition equipment by using a liquid manufacturing process.;CONSTITUTION: A solution of A is coated in a substrate through spin-coating. The substrate coated with the solution of A is dried under 200°C~250°C for more than one minute. A solution of B is coated in the substrate coated with the solution through spin-coating. The substrate coated with the solution of B is dried under 200°C~250°C for more than one minute. The substrate surface is cleaned and dried.;COPYRIGHT KIPO 2012