Studies on the Photochemical Deposition (PCD) of II-VI Compound Semiconductor Thin Films of ZnS from Aqueous Solution

摘要

Zinc sulphide (ZnS) thin films were depositedon Indium oxide coaled glass substrates by Photo Chemical Deposition (PCD) with starting precursor of Zinc sulphate and sodium thiosulphate as a source material for Zn and S respectively. In addition the pH was varied (3 to 8) using sulphuric acid by adding up in the precursor. Later the ZnS thin films were annealed at 500℃ and it was found that crystalline structure was improved. Zinc blende crystalline structure was observed on the thin films using X-ray diffractometer (XRD). The morphological behavior was observed using Scanning electron microscope (SEM) and it reveals that the size of the grain increases after annealing at 500℃. UV-spectrometer was used to analyze the aqueous solution optical behavior before and after deposition. The average thickness of thin film was estimated as ～1.02 micron measured by stylus profilometer method.