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Method for manufacturing nitrogen-doped group II-VI compound semiconductor thin films
Method for manufacturing nitrogen-doped group II-VI compound semiconductor thin films
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机译:氮掺杂的II-VI族化合物半导体薄膜的制造方法
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摘要
Nitrogen-doped group II-VI compound semiconductor thin film manufacturing method and apparatus which are applicable to an MOVPE process. The group II-VI compound semiconductor thin film manufacturing method according to the present invention is characterized by the use of osmium as a catalyst to activate nitrogen molecules. The growth device according to the present invention has a construction wherein a nitrogen gas introducing pipe for blowing a nitrogen gas against a semiconductor substrate is disposed in a reaction chamber for growing the group II-VI compound semiconductor thin film by the MOVPE process and the osmium is disposed between the semiconductor substrate and the nitrogen gas introducing pipe.
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