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Microstructure of SnS Thin Films Obtained by Hot Wall Vacuum Deposition Method

机译:热壁真空沉积法获得的SnS薄膜的微观结构

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SnS thin films within the thickness range of 0.5-12 (mu)m were obtained on pure and Mo-coated glass substrates by the hot wall vacuum deposition method (HWVD). Detailed microstructure of these materials was examined using X-Ray diffraction, Auger electron spectroscopy, Scanning electron microscopy and Atomic force microscopy. The SnS layers are single-phase with mostly uniform depth distribution of the elements. Tin sulfide films on pure glass substrates show (111) or (010) preferred orientations, while the films on Mo-coated glass substrates are oriented only along (111) plane. As revealed by Scanning electron microscopy (SEM) SnS thin films are polycrystalline with pinhole-free densely packed microstructure and strongly adhered to the substrate surface. The surface roughness mean values (R_(a)) are in range of 50-65 nm for SnS films grown on pure glass and in range of 55-150 nm for the films grown on Mo-coated glass. The R_(a) value increases with increasing of substrate temperature.
机译:通过热壁真空沉积法(HWVD)在纯的和涂有Mo的玻璃基板上获得了厚度范围为0.5-12μm的SnS薄膜。使用X射线衍射,俄歇电子能谱,扫描电子显微镜和原子力显微镜检查了这些材料的详细微观结构。 SnS层是单相的,元素的深度分布基本均匀。纯玻璃基板上的硫化锡膜表现出(111)或(010)较好的取向,而Mo涂层玻璃基板上的膜仅沿(111)平面取向。如通过扫描电子显微镜(SEM)所揭示的,SnS薄膜是具有无针孔的致密堆积的微结构并且牢固地粘附至基板表面的多晶。对于在纯玻璃上生长的SnS膜,表面粗糙度平均值(R_(a))在50-65 nm的范围内,对于在Mo涂层玻璃上生长的膜的表面粗糙度平均值(R_(a))在55-150 nm的范围内。 R_(a)值随着基板温度的升高而增加。

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