N-TYPE SNS THIN-FILM, PHOTOELECTRIC TRANSDUCER, SOLAR CELL, N-TYPE SNS THIN-FILM PRODUCTION METHOD, AND N-TYPE SNS THIN-FILM PRODUCTION DEVICE

摘要

This n-type SnS thin-film has an average thickness of 0.100-10μm, exhibits a ratio (α1.1/α1.6) of the absorption coefficient α1.1 at a photon energy of 1.1eV to the absorption coefficient α1.6 at a photon energy of 1.6eV of 0.200 or less, exhibits an atomic ratio of S content to Sn content of 0.85-1.10, and has n-type conductivity.