Effects of Sn^+ Ion Implantation on the Thermoelectric Properties of n-type Lead Telluride

摘要

The n-type PbTe doped with 0.05 mol fraction Pbl2 was hot-pressed, and the sintered samples were implanted by Sn+ ions at 200 KeV with doses of 6×1016 and 1×1017 ions/cm2. The effect of Sn+ implantation on thermoelectric properties was then investigated. The results show that Sn+ ion implantation can modify thermoelectric properties of the n-type PbTe and greatly improve the dimensionless