首页> 外文期刊>Journal de Physique, IV: Proceedings of International Conference >Dielectric relaxation phenomena in superparaelectric and ferroelectric ceramic thin films and the relevance with respect to high density DRAM and FRAM applications
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Dielectric relaxation phenomena in superparaelectric and ferroelectric ceramic thin films and the relevance with respect to high density DRAM and FRAM applications

机译:超顺电和铁电陶瓷薄膜中的介电弛豫现象及其与高密度DRAM和FRAM应用的相关性

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摘要

Dielectric relaxation has been observed for a wide variety of materials. Especially for dielectric thin films a typical Curie - von Schweidler relaxation has been observed by many groups in the literature. although some possible reasons for these relaxation phenomena have been discussed, a comprehensive understanding of the physical origins involved could not be obtained by now. The purpose of this contribution is to present a wide range of experimental results collected on Pb(Zr, Ti)O_3 (PZT) thin films. Results are compared to investigations on (Ba, Sr)TiO_3 and SrTiO_3 films.
机译:对于各种各样的材料已经观察到介电弛豫。尤其是对于介电薄膜,文献中的许多研究小组都观察到了典型的居里-冯·施威德勒弛豫。尽管已经讨论了导致这些松弛现象的一些可能原因,但目前尚无法获得对所涉及物理起源的全面理解。该贡献的目的是提供在Pb(Zr,Ti)O_3(PZT)薄膜上收集的各种实验结果。将结果与(Ba,Sr)TiO_3和SrTiO_3膜的研究结果进行比较。

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