Effect of an In-Plane Magnetic Field on Magnetoresistance Hysteresis of the Two-Dimensional Electron Gas in the Integer Quantum Hall Effect Regime

摘要

Effect of an in-plane magnetic field on the features of the magnetoresistance of a narrow conducting channel placed in the bath of a macroscopic two-dimensional electron gas has been studied. These features are manifested in the hysteretic behavior of the magnetoresistance in the quantum Hall effect regime. It has been found that the hysteresis loops observed in different ranges of the filling factor may be separated into two groups that differ in both the response to the in-plane magnetic field and the temperature dependence. The basic features observed near the integer filling factors v = 1 and 2 are almost independent of the in-plane magnetic field. Therefore, their origin is not associated with spin effects. At the same time, additional features that appear at v 1.8 and 2.2 are suppressed by the in-plane magnetic field B_||= 6 T and almost temperature-independent from 45 mK to 1 K.