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Combined assessment of piezoelectric A1N films using X-ray diffraction, infrared absorption and atomic force microscopy

机译:利用X射线衍射,红外吸收和原子力显微镜对压电AlN薄膜进行综合评估

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In this work we present the comparative study of sputtered A1N films by X-ray diffraction (XRD), infrared absorption in the reflectance mode (R-IR), atomic force microscopy (AFM) and the measurement of their piezoelectric response. The aim of this comparison is to achieve a good understanding of the information provided by each technique to relate it with the piezoelectric behaviour of the films. A large set of A1N films with different characteristics has been evaluated. We have observed that films with perfect c-axis orientation, as measured by XRD, exhibit an excellent piezoelectric response. The presence of traces of non-0002 reflections in the XRD patterns of some films, indicative of the existence of tilted grains, is related to a significant reduction in their piezoelectric response. In such cases, R-IR and AFM measurements are significantly more sensitive for the detection of tilted grains than conventional XRD measurements.
机译:在这项工作中,我们通过X射线衍射(XRD),反射模式下的红外吸收(R-IR),原子力显微镜(AFM)以及它们的压电响应的测量,对溅射的AlN薄膜进行了比较研究。这种比较的目的是对每种技术提供的信息有一个很好的了解,以将其与薄膜的压电性能相关联。已评估了大量具有不同特性的AlN薄膜。我们已经观察到,通过XRD测量的具有完美c轴取向的薄膜表现出出色的压电响应。一些膜的XRD图案中存在非0002反射痕迹,表明存在倾斜的晶粒,这与它们的压电响应显着降低有关。在这种情况下,与传统的XRD测量相比,R-IR和AFM测量对倾斜晶粒的检测更加灵敏。

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