The role of boron atoms in heavily boron-doped semiconducting homoepitaxial diamond growth - Study of surface morphology

摘要

Surface properties of CVD diamond films grown with high admixture of B{sub}2H{sub}6 to H{sub}2 and CH{sub}4 are characterized in this paper. Results show that high contents of diborane in the gas phase cause a reduction of imperfections such as unepitaxial crystallites and pyramidal hillocks, which is characterized by optical microscopy. These results suggest that the boron atoms play an important role at the beginning of nucleation and during the CVD growth of diamond.