Diamond nanoseeding on silicon: Stability under H_2 MPCVD exposures and early stages of growth

摘要

Detonation nanodiamond dispersed on silicon surfaces underwent different H_2 MPCVD exposures. The induced changes at the surface have been characterized in situ by XPS and XEELS. Then, a short CH_4/H_2 growth step was applied. This sequential study revealed an excellent stability of detonation nanodiamond. The sp~3 etching rate is insufficient to remove nanodiamond even under intense H_2 plasma. The H_2 exposure could be successfully used to remove C-C sp~2 carbon without altering sp~3 seeds. Moreover, the formation of silicon carbide observed after the hydrogen treatment is thought to be helpful to enhance the adhesion of nanodiamond particles on the substrate.