A MIS transistor using the nucleation surface of polycrystalline diamond

摘要

In this work, the nucleation surface of a polycrystalline diamond film was used for the first time to fabricate a MISFET structure using standard photolithographic procedures, with a channel length of 100 mu m. The resulting structure works as an enhancement-type p-type MOSFET. The I_(ON)/ I_(OFF) ratio is about three orders of magnitude. The saturation of the current is clearly observed, with I_(DS) currents of about 20 nA for KDS of 20 V. The smoothness of the nucleation surface allows a higher control of the electrodes, as well as their size decrease. The results show that, even though in an early stage, this investigation opens the door for a new generation of devices built on free-standing diamond films.