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Effects of post treatment on the field emission properties of CNTs grown by ECR-CVD

机译:后处理对通过ECR-CVD生长的CNT的场发射特性的影响

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Field emission display (FED) has been considered as one of the most promising application of carbon nanotubes. In FED application, the CVD assisted grown CNT cathodes have major problems, i.e., the screen effect of the well aligned CNT array reduces the field emission characteristics. The post treatments for cathode become necessary to improve the field emission characteristics and uniformity of the CNT emitters. In this study, well-aligned carbon nanotube array on Si substrate were synthesized by using a catalyst-assisted microwave plasma electron cyclotron resonance chemical vapor deposition (ECR-CVD) system with methane as source gas. Then a series of post treatment, including hydrogen plasma, oxygen plasma and electroless nickel plating, were conducted on the as grown CNT arrays. The results show that the H-plasma may damage the stems of CNTs at longer etching time. Consequently, the field emission characteristic of CNTs is reduced. In contrast, oxygen plasma increases the field emission characteristic of CNTs by reducing CNTs diameter and increasing inter-tube distance. Comparing to plasma post-treatment, electroless nickel-plating post-treatment is apparently improve the field emission characteristic of CNTs. This process results in the gathering of nickel catalysts at the top of CNTs and concentration CNTs field emission ability.
机译:场发射显示器(FED)被认为是碳纳米管最有前途的应用之一。在FED应用中,CVD辅助生长的CNT阴极具有主要问题,即,良好排列的CNT阵列的屏蔽效应降低了场发射特性。阴极的后处理对于改善场发射特性和CNT发射器的均匀性变得必要。在这项研究中,通过使用甲烷为原料气的催化剂辅助微波等离子体电子回旋共振化学气相沉积(ECR-CVD)系统在Si衬底上合成了排列良好的碳纳米管阵列。然后,在生长的CNT阵列上进行一系列的后处理,包括氢等离子体,氧等离子体和化学镀镍。结果表明,在较长的刻蚀时间下,H-等离子体可能会损坏CNTs的茎。因此,CNT的场发射特性降低。相反,氧等离子体通过减小CNT的直径并增加管间距离来增加CNT的场发射特性。与等离子体后处理相比,化学镀镍后处理显然可以改善CNT的场发射特性。该过程导致镍催化剂聚集在CNT的顶部,并浓缩CNT的场发射能力。

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