Preparation of carbon nitride films by DC arc plasma jet CVD

摘要

Carbon nitride thin films were deposited on Si (100) substrates by DC arc plasma jet CVD. CH_4+N_2 and graphite+N_2 were used as carbon nitrogen sources. FT-IR analysis revealed the C-N, C=N, C=N bonds exist in the deposited films. When the graphite+N_2 used as the precursor, the maximum deposition rate was about 3.2 mu m/min. The maximum N/C composition ratio of deposited film from graphite+N_2 was about 0 while that of the film deposited from CH_4+N_2 was 0.41. These results suggest that the graphite is a suitable carbon source for deposition of car nitride thin films.