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PLASMA CVD METHOD, METHOD FOR FORMING SILICON NITRIDE FILM, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND PLASMA CVD METHOD
PLASMA CVD METHOD, METHOD FOR FORMING SILICON NITRIDE FILM, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND PLASMA CVD METHOD
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机译:等离子体CVD法,氮化硅膜的形成方法,半导体装置的制造方法以及等离子体CVD法
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摘要
A plasma processing apparatus includes a process chamber configured to be vacuum-exhausted; a worktable configured to place a target substrate thereon inside the process chamber; a microwave generation source configured to generate microwaves; a planar antenna including a plurality of slots and configured to supply microwaves generated by the microwave generation source through the slots into the process chamber; a gas supply mechanism configured to supply a film formation source gas into the process chamber; and an RF power supply configured to apply an RF power to the worktable. The apparatus is preset to turn a nitrogen-containing gas and a silicon-containing gas supplied in the process chamber into plasma by the microwaves, and to deposit a silicon nitride film on a surface of the target substrate by use of the plasma, while applying the RF power to the worktable.
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